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ユ ニ ッ ト シ ー ト |
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氏 名 |
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ユニット |
パワーデバイスの基本 |
分類番号 |
EU205-X310-2 |
自 己評 価 |
指導員確 認 |
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到達水準 |
(1)パワー半導体デバイスの構造について知っていること |
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(2)パワー半導体デバイスの動作原理について知っていること |
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(3)パワー半導体デバイスの選定方法について知っていること |
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(4)安全衛生作業ができること |
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教科の細目 |
内 容 |
訓 練 時 間 |
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学科 |
実技 |
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スイッチ |
(1)機械的スイッチと半導体スイッチ |
1 |
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(2)理想的なスイッチとその条件 |
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(3)半導体スイッチに要求される条件 |
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パワー半導体 |
(1)半導体とは |
2 |
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デバイス |
(2)真性半導体 |
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(3)n形半導体とp形半導体 |
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(4)パワー半導体デバイスの種類 |
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ダイオード |
(1)ダイオードの特性 |
1 |
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(2)ダイオードの用途 |
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サイリスタ |
(1)サイリスタの構造と働き |
1 |
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(2)サイリスタのターンオン |
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(3)サイリスタのターンオフ |
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(4)ゲートターンオフサイリスタ(GTO) |
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パワートランジ |
(1)バイポーラトランジスタ |
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スタ |
(2)バイポーラトランジスタのスイッチング特性 |
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パワーMOSFETと |
(1)FETの基本原理 |
2 |
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IGBT |
(2)接合形FET |
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(3)パワーMOSFETとスイッチング特性 |
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(4)IGBT |
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デバイスの選定 |
(1)各種デバイスの選定方法 |
1 |
2 |
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(2)パワートランジスタの選定方法 |
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(3)MOSFETの選定方法 |
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(4)IGBTの選定方法 |
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安全衛生 |
(1)安全一般 |
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(2)整理整頓 |
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9 |
9 |
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使用する機械
器具等 |
オシロスコープ、直流電源、波形発生装置、テスタ、ブレッドボード、各種デバイス |
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備 考 |
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※自己評価欄にはA、B、Cを記入する。 |
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